Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC044EMT2L
Manufacturer Part Number | DTC044EMT2L |
---|---|
Future Part Number | FT-DTC044EMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTC044EMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 30mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC044EMT2L Weight | Contact Us |
Replacement Part Number | DTC044EMT2L-FT |
RN2104(T5L,F,T)
Toshiba Semiconductor and Storage
RN2106(T5L,F,T)
Toshiba Semiconductor and Storage
RN2108(T5L,F,T)
Toshiba Semiconductor and Storage
RN2117(T5L,F,T)
Toshiba Semiconductor and Storage
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage
RN1301,LF
Toshiba Semiconductor and Storage
RN2315TE85LF
Toshiba Semiconductor and Storage
RN1305,LF
Toshiba Semiconductor and Storage
RN1306,LF
Toshiba Semiconductor and Storage
RN1308,LF
Toshiba Semiconductor and Storage
XC3SD1800A-4FGG676C
Xilinx Inc.
XC2VP7-5FG456I
Xilinx Inc.
M2GL090S-1FGG484I
Microsemi Corporation
LFE5UM5G-85F-8BG554I
Lattice Semiconductor Corporation
EP1S20F672C6
Intel
5SGSED6N2F45C2LN
Intel
XC7VX415T-3FFG1158E
Xilinx Inc.
LFE3-70EA-8FN672I
Lattice Semiconductor Corporation
EP4CGX150DF31C7N
Intel
EPF10K50SQC240-1
Intel