Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC014YMT2L
Manufacturer Part Number | DTC014YMT2L |
---|---|
Future Part Number | FT-DTC014YMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTC014YMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 70mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC014YMT2L Weight | Contact Us |
Replacement Part Number | DTC014YMT2L-FT |
RN1102ACT(TPL3)
Toshiba Semiconductor and Storage
RN1102CT(TPL3)
Toshiba Semiconductor and Storage
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
RN1103CT(TPL3)
Toshiba Semiconductor and Storage
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage
RN1104CT(TPL3)
Toshiba Semiconductor and Storage
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage
RN1105CT(TPL3)
Toshiba Semiconductor and Storage
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage
RN1106CT(TPL3)
Toshiba Semiconductor and Storage