Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTB543XMT2L
Manufacturer Part Number | DTB543XMT2L |
---|---|
Future Part Number | FT-DTB543XMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTB543XMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 260MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB543XMT2L Weight | Contact Us |
Replacement Part Number | DTB543XMT2L-FT |
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101CT(TPL3)
Toshiba Semiconductor and Storage
RN1102ACT(TPL3)
Toshiba Semiconductor and Storage
RN1102CT(TPL3)
Toshiba Semiconductor and Storage
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
RN1103CT(TPL3)
Toshiba Semiconductor and Storage
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage
RN1104CT(TPL3)
Toshiba Semiconductor and Storage
AGLN020V2-CSG81I
Microsemi Corporation
A54SX32A-1FGG256
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP1K100FC256-2N
Intel
5SGXMBBR3H43I3LN
Intel
5SGXEA5H2F35I3L
Intel
XA7A50T-1CPG236Q
Xilinx Inc.
LFXP2-17E-5FTN256I
Lattice Semiconductor Corporation
LFEC3E-4QN208I
Lattice Semiconductor Corporation
EP2SGX30DF780C5
Intel