Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTB123YUT106
Manufacturer Part Number | DTB123YUT106 |
---|---|
Future Part Number | FT-DTB123YUT106 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTB123YUT106 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | UMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB123YUT106 Weight | Contact Us |
Replacement Part Number | DTB123YUT106-FT |
DTA023EEBTL
Rohm Semiconductor
DTA023JEBTL
Rohm Semiconductor
DTA023YEBTL
Rohm Semiconductor
DTA024EEBTL
Rohm Semiconductor
DTA043EEBTL
Rohm Semiconductor
DTA043TEBTL
Rohm Semiconductor
DTA043ZEBTL
Rohm Semiconductor
DTA044EEBTL
Rohm Semiconductor
DTA114YEBTL
Rohm Semiconductor
DTA123JEBTL
Rohm Semiconductor
XC3SD1800A-4FGG676C
Xilinx Inc.
XC2VP7-5FG456I
Xilinx Inc.
M2GL090S-1FGG484I
Microsemi Corporation
LFE5UM5G-85F-8BG554I
Lattice Semiconductor Corporation
EP1S20F672C6
Intel
5SGSED6N2F45C2LN
Intel
XC7VX415T-3FFG1158E
Xilinx Inc.
LFE3-70EA-8FN672I
Lattice Semiconductor Corporation
EP4CGX150DF31C7N
Intel
EPF10K50SQC240-1
Intel