Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTA124XMT2L
Manufacturer Part Number | DTA124XMT2L |
---|---|
Future Part Number | FT-DTA124XMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTA124XMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA124XMT2L Weight | Contact Us |
Replacement Part Number | DTA124XMT2L-FT |
RN1313(TE85L,F)
Toshiba Semiconductor and Storage
RN2304(TE85L,F)
Toshiba Semiconductor and Storage
RN2307(TE85L,F)
Toshiba Semiconductor and Storage
RN2308(TE85L,F)
Toshiba Semiconductor and Storage
RN2309(TE85L,F)
Toshiba Semiconductor and Storage
RN2311(TE85L,F)
Toshiba Semiconductor and Storage
RN2313(TE85L,F)
Toshiba Semiconductor and Storage
RN2103ACT(TPL3)
Toshiba Semiconductor and Storage
RN2105ACT(TPL3)
Toshiba Semiconductor and Storage
RN2106ACT(TPL3)
Toshiba Semiconductor and Storage
XC6SLX4-L1TQG144I
Xilinx Inc.
XC2S30-5VQ100I
Xilinx Inc.
XC6SLX25-N3FGG484I
Xilinx Inc.
APA600-FG484
Microsemi Corporation
APA450-FG256
Microsemi Corporation
EP20K30EFC144-3
Intel
5AGZME1E3H29I4N
Intel
XA6SLX9-2CSG225Q
Xilinx Inc.
LFE3-35EA-7FN672C
Lattice Semiconductor Corporation
EP1S80F1020I7N
Intel