Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTA123EMFHAT2L
Manufacturer Part Number | DTA123EMFHAT2L |
---|---|
Future Part Number | FT-DTA123EMFHAT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
DTA123EMFHAT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA123EMFHAT2L Weight | Contact Us |
Replacement Part Number | DTA123EMFHAT2L-FT |
RN2318(TE85L,F)
Toshiba Semiconductor and Storage
RN1302,LF
Toshiba Semiconductor and Storage
RN1303(TE85L,F)
Toshiba Semiconductor and Storage
RN1309(TE85L,F)
Toshiba Semiconductor and Storage
RN1310(TE85L,F)
Toshiba Semiconductor and Storage
RN1313(TE85L,F)
Toshiba Semiconductor and Storage
RN2304(TE85L,F)
Toshiba Semiconductor and Storage
RN2307(TE85L,F)
Toshiba Semiconductor and Storage
RN2308(TE85L,F)
Toshiba Semiconductor and Storage
RN2309(TE85L,F)
Toshiba Semiconductor and Storage
AGLN010V5-UCG36
Microsemi Corporation
LFE2M100E-6F1152C
Lattice Semiconductor Corporation
AGL060V5-VQG100
Microsemi Corporation
10M25DCF484I7G
Intel
5SGXEB6R2F40C3
Intel
5SGXMA7H2F35C2LN
Intel
EP3SL150F1152C2
Intel
A1020B-PL44I
Microsemi Corporation
XC4VLX160-11FF1148C
Xilinx Inc.
EPF8452AQC160-3AC
Intel