Home / Products / Integrated Circuits (ICs) / Memory / DS1250AB-100IND+
Manufacturer Part Number | DS1250AB-100IND+ |
---|---|
Future Part Number | FT-DS1250AB-100IND+ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DS1250AB-100IND+ Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | NVSRAM |
Technology | NVSRAM (Non-Volatile SRAM) |
Memory Size | 4Mb (512K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 100ns |
Access Time | 100ns |
Memory Interface | Parallel |
Voltage - Supply | 4.75V ~ 5.25V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 32-DIP Module (0.600", 15.24mm) |
Supplier Device Package | 32-EDIP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DS1250AB-100IND+ Weight | Contact Us |
Replacement Part Number | DS1250AB-100IND+-FT |
MR0A16AVYS35
Everspin Technologies Inc.
MR0A16AVYS35R
Everspin Technologies Inc.
MR0A16AYS35R
Everspin Technologies Inc.
MR2A08ACYS35R
Everspin Technologies Inc.
MR2A08AMYS35
Everspin Technologies Inc.
MR2A08AMYS35R
Everspin Technologies Inc.
MR2A08AYS35R
Everspin Technologies Inc.
MR2A16ACYS35R
Everspin Technologies Inc.
MR2A16AMYS35
Everspin Technologies Inc.
MR2A16AMYS35R
Everspin Technologies Inc.
XC4013XL-2HT144C
Xilinx Inc.
LFXP6E-4TN144C
Lattice Semiconductor Corporation
A1020B-PQG100C
Microsemi Corporation
XC3S250E-5VQG100C
Xilinx Inc.
A3P600-2FGG256I
Microsemi Corporation
A3P1000-PQG208I
Microsemi Corporation
A42MX16-1PQG208M
Microsemi Corporation
LFE3-35EA-6FTN256I
Lattice Semiconductor Corporation
LFEC6E-3F484C
Lattice Semiconductor Corporation
LCMXO2-2000HE-5MG132I
Lattice Semiconductor Corporation