Home / Products / Integrated Circuits (ICs) / Memory / DS1230AB-120IND+
Manufacturer Part Number | DS1230AB-120IND+ |
---|---|
Future Part Number | FT-DS1230AB-120IND+ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DS1230AB-120IND+ Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | NVSRAM |
Technology | NVSRAM (Non-Volatile SRAM) |
Memory Size | 256Kb (32K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 120ns |
Access Time | 120ns |
Memory Interface | Parallel |
Voltage - Supply | 4.75V ~ 5.25V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package | 28-EDIP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DS1230AB-120IND+ Weight | Contact Us |
Replacement Part Number | DS1230AB-120IND+-FT |
MR256D08BMA45
Everspin Technologies Inc.
MR0A16ACMA35R
Everspin Technologies Inc.
MR0A16AMA35
Everspin Technologies Inc.
MR0A16AMA35R
Everspin Technologies Inc.
MR0A16AVMA35
Everspin Technologies Inc.
MR0A16AVMA35R
Everspin Technologies Inc.
MR2A08ACMA35R
Everspin Technologies Inc.
MR2A08AMA35
Everspin Technologies Inc.
MR2A08AMA35R
Everspin Technologies Inc.
MR2A16ACMA35R
Everspin Technologies Inc.
LCMXO2-640UHC-4TG144C
Lattice Semiconductor Corporation
A3P060-TQG144I
Microsemi Corporation
LCMXO2280E-3T144C
Lattice Semiconductor Corporation
LCMXO2-640HC-6TG100C
Lattice Semiconductor Corporation
XC3S400AN-4FT256C
Xilinx Inc.
M2GL090TS-1FG484I
Microsemi Corporation
5SGXMA7N3F40C3
Intel
5SGSED6K2F40I2LN
Intel
LFXP2-30E-6FN484C
Lattice Semiconductor Corporation
EP3SE110F780I3
Intel