Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRDNB26W-7
Manufacturer Part Number | DRDNB26W-7 |
---|---|
Future Part Number | FT-DRDNB26W-7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DRDNB26W-7 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 220 Ohms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DRDNB26W-7 Weight | Contact Us |
Replacement Part Number | DRDNB26W-7-FT |
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