Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRC2114E0L
Manufacturer Part Number | DRC2114E0L |
---|---|
Future Part Number | FT-DRC2114E0L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DRC2114E0L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DRC2114E0L Weight | Contact Us |
Replacement Part Number | DRC2114E0L-FT |
PDTA115ES,126
NXP USA Inc.
PDTA115TS,126
NXP USA Inc.
PDTA123ES,126
NXP USA Inc.
PDTA123JS,126
NXP USA Inc.
PDTA123YS,126
NXP USA Inc.
PDTA124ES,126
NXP USA Inc.
PDTA124TS,126
NXP USA Inc.
PDTA124XS,126
NXP USA Inc.
PDTA143TS,126
NXP USA Inc.
PDTA143XS,126
NXP USA Inc.
A3P600L-1FGG484I
Microsemi Corporation
APA075-PQG208A
Microsemi Corporation
A42MX16-VQ100A
Microsemi Corporation
5SGXEA5K3F35C3N
Intel
XC6VSX315T-1FFG1156C
Xilinx Inc.
LFEC15E-4F484C
Lattice Semiconductor Corporation
LFE2M35E-5F672I
Lattice Semiconductor Corporation
LFE2M50E-6FN484I
Lattice Semiconductor Corporation
EPF6016AQC208-3N
Intel
5SGSMD4H2F35C1N
Intel