Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRA3143Z0L
Manufacturer Part Number | DRA3143Z0L |
---|---|
Future Part Number | FT-DRA3143Z0L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DRA3143Z0L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | SSSMini3-F2-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DRA3143Z0L Weight | Contact Us |
Replacement Part Number | DRA3143Z0L-FT |
PDTC115EK,115
NXP USA Inc.
PDTC115TK,115
NXP USA Inc.
PDTC123EK,115
NXP USA Inc.
PDTC123JK,115
NXP USA Inc.
PDTC123YK,115
NXP USA Inc.
PDTC124EK,115
NXP USA Inc.
PDTC124TK,115
NXP USA Inc.
PDTC124XK,115
NXP USA Inc.
PDTC143EK,115
NXP USA Inc.
PDTC143TK,115
NXP USA Inc.
A40MX02-FVQG80
Microsemi Corporation
LFEC3E-3T144C
Lattice Semiconductor Corporation
XC6SLX9-2FTG256I
Xilinx Inc.
XC3SD1800A-4FG676C
Xilinx Inc.
10M25SCE144A7G
Intel
5SGXEA3K2F35I2LN
Intel
XC7VX690T-L2FFG1157E
Xilinx Inc.
XA7A100T-1CSG324I
Xilinx Inc.
5AGXBA7D4F35I5N
Intel
EP20K200EBC356-2N
Intel