Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRA2115G0L
Manufacturer Part Number | DRA2115G0L |
---|---|
Future Part Number | FT-DRA2115G0L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DRA2115G0L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DRA2115G0L Weight | Contact Us |
Replacement Part Number | DRA2115G0L-FT |
FJN3305RTA
ON Semiconductor
FJN4309RTA
ON Semiconductor
FJN4301RTA
ON Semiconductor
FJN3303RTA
ON Semiconductor
FJN3304RTA
ON Semiconductor
FJN3306RTA
ON Semiconductor
FJN3307RTA
ON Semiconductor
FJN3308RTA
ON Semiconductor
FJN3309RTA
ON Semiconductor
FJN3310RTA
ON Semiconductor
LFXP3E-5T100C
Lattice Semiconductor Corporation
XC3S500E-4FG320I
Xilinx Inc.
XA3S1200E-4FTG256Q
Xilinx Inc.
XCVU065-1FFVC1517I
Xilinx Inc.
A3PE600-2FGG484
Microsemi Corporation
LFE5UM5G-45F-8BG381C
Lattice Semiconductor Corporation
EP1S20B672C6
Intel
5SGXEA9N2F45I2L
Intel
A40MX04-1PLG84I
Microsemi Corporation
LFXP2-17E-5FT256C
Lattice Semiconductor Corporation