Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMJ70H900HJ3
Manufacturer Part Number | DMJ70H900HJ3 |
---|---|
Future Part Number | FT-DMJ70H900HJ3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
DMJ70H900HJ3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.4nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 603pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3, IPak, Short Leads |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMJ70H900HJ3 Weight | Contact Us |
Replacement Part Number | DMJ70H900HJ3-FT |
GA50JT06-258
GeneSiC Semiconductor
NVATS5A304PLZT4G
ON Semiconductor
NVB082N65S3F
ON Semiconductor
NVBLS0D5N04M8TXG
ON Semiconductor
DMN2080UCB4-7
Diodes Incorporated
2SJ649-AZ
Renesas Electronics America
BSP75GQTC
Diodes Incorporated
DMG3414UQ-7
Diodes Incorporated
DMN10H220LQ-7
Diodes Incorporated
DMN2024UFDF-13
Diodes Incorporated
A3P015-1QNG68
Microsemi Corporation
5SGXMA7N1F40C2N
Intel
5SGXEA7N1F45I2N
Intel
5SGXMB5R1F43C1N
Intel
EP4CGX15BF14I7N
Intel
XC6VLX195T-1FFG784I
Xilinx Inc.
XC2VP7-6FF672I
Xilinx Inc.
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LCMXO2-4000HC-4FG484I
Lattice Semiconductor Corporation
EP4SGX70HF35I3N
Intel