Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / DMG563H10R
Manufacturer Part Number | DMG563H10R |
---|---|
Future Part Number | FT-DMG563H10R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DMG563H10R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms, 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms, 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package | SMini5-F3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMG563H10R Weight | Contact Us |
Replacement Part Number | DMG563H10R-FT |
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