Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / DMG214010R
Manufacturer Part Number | DMG214010R |
---|---|
Future Part Number | FT-DMG214010R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DMG214010R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 PNP Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | - |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V / 210 @ 2mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 500nA, 100µA |
Frequency - Transition | 150MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Supplier Device Package | Mini6-G4-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMG214010R Weight | Contact Us |
Replacement Part Number | DMG214010R-FT |
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