Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / DME914C10R
Manufacturer Part Number | DME914C10R |
---|---|
Future Part Number | FT-DME914C10R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DME914C10R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 300MHz |
Power - Max | 125mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SSMini6-F3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DME914C10R Weight | Contact Us |
Replacement Part Number | DME914C10R-FT |
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