Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DDTC114TE-7-F
Manufacturer Part Number | DDTC114TE-7-F |
---|---|
Future Part Number | FT-DDTC114TE-7-F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DDTC114TE-7-F Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-523 |
Supplier Device Package | SOT-523 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DDTC114TE-7-F Weight | Contact Us |
Replacement Part Number | DDTC114TE-7-F-FT |
BCR 169F E6327
Infineon Technologies
BCR 179F E6327
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BCR 183F E6327
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BCR 191F E6327
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BCR 192F E6327
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BCR 196F E6327
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BCR 198F E6327
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BCR 199F E6327
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BCR 101T E6327
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