Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DDTB143EC-7-F
Manufacturer Part Number | DDTB143EC-7-F |
---|---|
Future Part Number | FT-DDTB143EC-7-F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DDTB143EC-7-F Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 47 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DDTB143EC-7-F Weight | Contact Us |
Replacement Part Number | DDTB143EC-7-F-FT |
DDTA144VE-7
Diodes Incorporated
DDTA144WE-7
Diodes Incorporated
DDTC113TE-7
Diodes Incorporated
DDTC113ZE-7
Diodes Incorporated
DDTC114EE-7
Diodes Incorporated
DDTC114GE-7
Diodes Incorporated
DDTC114TE-7
Diodes Incorporated
DDTC114WE-7
Diodes Incorporated
DDTC114WE-7-F
Diodes Incorporated
DDTC114YE-7
Diodes Incorporated
LFE2-12E-6TN144I
Lattice Semiconductor Corporation
LFE2-12E-5TN144C
Lattice Semiconductor Corporation
XC6SLX75T-3CSG484I
Xilinx Inc.
AFS600-1FG484
Microsemi Corporation
EPF10K250EFC672-1
Intel
5SGSMD3E2H29I3LN
Intel
5SGSMD4E2H29I3L
Intel
5SGXMA7H2F35C2LN
Intel
EP3SE110F1152C2N
Intel
EPF10K30EQI208-2N
Intel