Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DDTA115GCA-7
Manufacturer Part Number | DDTA115GCA-7 |
---|---|
Future Part Number | FT-DDTA115GCA-7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DDTA115GCA-7 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | - |
Resistor - Emitter Base (R2) | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DDTA115GCA-7 Weight | Contact Us |
Replacement Part Number | DDTA115GCA-7-FT |
BCR 141L3 E6327
Infineon Technologies
BCR 142L3 E6327
Infineon Technologies
BCR 146L3 E6327
Infineon Technologies
BCR 148L3 E6327
Infineon Technologies
BCR 149L3 E6327
Infineon Technologies
BCR 151L3 E6327
Infineon Technologies
BCR 153L3 E6327
Infineon Technologies
BCR 158L3 E6327
Infineon Technologies
BCR 162L3 E6327
Infineon Technologies
BCR 164L3 E6327
Infineon Technologies
LFE2-12E-6TN144I
Lattice Semiconductor Corporation
LFE2-12E-5TN144C
Lattice Semiconductor Corporation
XC6SLX75T-3CSG484I
Xilinx Inc.
AFS600-1FG484
Microsemi Corporation
EPF10K250EFC672-1
Intel
5SGSMD3E2H29I3LN
Intel
5SGSMD4E2H29I3L
Intel
5SGXMA7H2F35C2LN
Intel
EP3SE110F1152C2N
Intel
EPF10K30EQI208-2N
Intel