Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DDTA114GE-7-F
Manufacturer Part Number | DDTA114GE-7-F |
---|---|
Future Part Number | FT-DDTA114GE-7-F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DDTA114GE-7-F Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | - |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-523 |
Supplier Device Package | SOT-523 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DDTA114GE-7-F Weight | Contact Us |
Replacement Part Number | DDTA114GE-7-F-FT |
BCR 179T E6327
Infineon Technologies
BCR 183T E6327
Infineon Technologies
BCR 185T E6327
Infineon Technologies
BCR 189T E6327
Infineon Technologies
BCR 191T E6327
Infineon Technologies
BCR 192T E6327
Infineon Technologies
BCR 196T E6327
Infineon Technologies
BCR 198T E6327
Infineon Technologies
BCR 199T E6327
Infineon Technologies
DDTA144GCA-7-F
Diodes Incorporated
LFEC1E-5T144C
Lattice Semiconductor Corporation
XC3S200-4FTG256I
Xilinx Inc.
XC7K410T-2FBG676I
Xilinx Inc.
MPF300T-1FCG484E
Microsemi Corporation
XC4044XL-2HQ208I
Xilinx Inc.
XC7VX330T-1FF1157I
Xilinx Inc.
AX1000-FG676
Microsemi Corporation
AX1000-FGG676I
Microsemi Corporation
A40MX02-3PQ100I
Microsemi Corporation
EP1SGX40GF1020C7N
Intel