Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / CURC307-G
Manufacturer Part Number | CURC307-G |
---|---|
Future Part Number | FT-CURC307-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
CURC307-G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1000V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) |
Operating Temperature - Junction | 150°C (Max) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
CURC307-G Weight | Contact Us |
Replacement Part Number | CURC307-G-FT |
CDBA3100-G
Comchip Technology
CDBA3100-HF
Comchip Technology
CDBA340L-HF
Comchip Technology
CGRA4001-G
Comchip Technology
CGRA4007-G
Comchip Technology
CDBA360-HF
Comchip Technology
CDBA160-G
Comchip Technology
CDBA340-G
Comchip Technology
CDBA140L-HF
Comchip Technology
CDBA160-HF
Comchip Technology
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel