Home / Products / Inductors, Coils, Chokes / Fixed Inductors / CIG21L1R2MNE
Manufacturer Part Number | CIG21L1R2MNE |
---|---|
Future Part Number | FT-CIG21L1R2MNE |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CIG21L |
CIG21L1R2MNE Status (Lifecycle) | In Stock |
Part Status | Active |
Type | Multilayer |
Material - Core | - |
Inductance | 1.2µH |
Tolerance | ±20% |
Current Rating | 1.1A |
Current - Saturation | - |
Shielding | Shielded |
DC Resistance (DCR) | 125 mOhm |
Q @ Freq | - |
Frequency - Self Resonant | - |
Ratings | - |
Operating Temperature | -40°C ~ 125°C |
Inductance Frequency - Test | 1MHz |
Features | - |
Mounting Type | Surface Mount |
Package / Case | 0805 (2012 Metric) |
Supplier Device Package | - |
Size / Dimension | 0.079" L x 0.049" W (2.00mm x 1.25mm) |
Height - Seated (Max) | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
CIG21L1R2MNE Weight | Contact Us |
Replacement Part Number | CIG21L1R2MNE-FT |
CIGT252010LM1R5MNE
Samsung Electro-Mechanics
CIGT252010LMR47MNE
Samsung Electro-Mechanics
CIGT252012LM1R0MNE
Samsung Electro-Mechanics
CIGW252010EH4R7MNE
Samsung Electro-Mechanics
CIGW252010EH4R7SNE
Samsung Electro-Mechanics
CIGW252010GL1R0MNE
Samsung Electro-Mechanics
CIGW252010GL1R5MNE
Samsung Electro-Mechanics
CIGW252010GL4R7MNE
Samsung Electro-Mechanics
CIGW252010GLR47MNE
Samsung Electro-Mechanics
CIGW252010GM1R0MNE
Samsung Electro-Mechanics
EP2C5T144C8N
Intel
XC6VLX75T-3FFG484C
Xilinx Inc.
A3P250-FGG256T
Microsemi Corporation
AT40K10AL-1EQC
Microchip Technology
AT40K05-2RQC
Microchip Technology
5SGXMA5K3F40I3LN
Intel
LFE2M20SE-6FN256I
Lattice Semiconductor Corporation
LCMXO2-2000HE-6BG256C
Lattice Semiconductor Corporation
10AX090H4F34I3LG
Intel
EP2AGX65CU17C6ES
Intel