Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / C3M0120090D
Manufacturer Part Number | C3M0120090D |
---|---|
Future Part Number | FT-C3M0120090D |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | C3M™ |
C3M0120090D Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 15A, 15V |
Vgs(th) (Max) @ Id | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 17.3nC @ 15V |
Vgs (Max) | +18V, -8V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 600V |
FET Feature | - |
Power Dissipation (Max) | 97W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
C3M0120090D Weight | Contact Us |
Replacement Part Number | C3M0120090D-FT |
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