Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / C2M0280120D
Manufacturer Part Number | C2M0280120D |
---|---|
Future Part Number | FT-C2M0280120D |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Z-FET™ |
C2M0280120D Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 370 mOhm @ 6A, 20V |
Vgs(th) (Max) @ Id | 2.8V @ 1.25mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 20V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 259pF @ 1000V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
C2M0280120D Weight | Contact Us |
Replacement Part Number | C2M0280120D-FT |
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