Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / C2M0080170P
Manufacturer Part Number | C2M0080170P |
---|---|
Future Part Number | FT-C2M0080170P |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | C2M™ |
C2M0080170P Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 28A, 20V |
Vgs(th) (Max) @ Id | 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 20V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 1000V |
FET Feature | - |
Power Dissipation (Max) | 277W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4L |
Package / Case | TO-247-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
C2M0080170P Weight | Contact Us |
Replacement Part Number | C2M0080170P-FT |
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