Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / BYV29B-600PJ
Manufacturer Part Number | BYV29B-600PJ |
---|---|
Future Part Number | FT-BYV29B-600PJ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BYV29B-600PJ Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 9A |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 10µA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Operating Temperature - Junction | 175°C (Max) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYV29B-600PJ Weight | Contact Us |
Replacement Part Number | BYV29B-600PJ-FT |
APD360VPTR-G1
Diodes Incorporated
APD360VRTR-G1
Diodes Incorporated
APT30SCD65B
Microsemi Corporation
AS3BD-M3/H
Vishay Semiconductor Diodes Division
AS3BD-M3/I
Vishay Semiconductor Diodes Division
AS3BDHM3_A/H
Vishay Semiconductor Diodes Division
AS3BDHM3_A/I
Vishay Semiconductor Diodes Division
AS3BG-M3/H
Vishay Semiconductor Diodes Division
AS3BG-M3/I
Vishay Semiconductor Diodes Division
AS3BGHM3_A/H
Vishay Semiconductor Diodes Division
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel