Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / BYV26D-TAP
Manufacturer Part Number | BYV26D-TAP |
---|---|
Future Part Number | FT-BYV26D-TAP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BYV26D-TAP Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Avalanche |
Voltage - DC Reverse (Vr) (Max) | 800V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 2.5V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 5µA @ 800V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | SOD-57, Axial |
Supplier Device Package | SOD-57 |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYV26D-TAP Weight | Contact Us |
Replacement Part Number | BYV26D-TAP-FT |
1N5627-TAP
Vishay Semiconductor Diodes Division
1N5627-TR
Vishay Semiconductor Diodes Division
BY228-13TAP
Vishay Semiconductor Diodes Division
BY228-13TR
Vishay Semiconductor Diodes Division
BY228-15TR
Vishay Semiconductor Diodes Division
BY228TAP
Vishay Semiconductor Diodes Division
BYM36A-TAP
Vishay Semiconductor Diodes Division
BYM36B-TAP
Vishay Semiconductor Diodes Division
BYM36C-TAP
Vishay Semiconductor Diodes Division
BYM36D-TAP
Vishay Semiconductor Diodes Division
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel