Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / BYT52M-TR
Manufacturer Part Number | BYT52M-TR |
---|---|
Future Part Number | FT-BYT52M-TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BYT52M-TR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Avalanche |
Voltage - DC Reverse (Vr) (Max) | 1000V |
Current - Average Rectified (Io) | 1.4A |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 200ns |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | SOD-57, Axial |
Supplier Device Package | SOD-57 |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYT52M-TR Weight | Contact Us |
Replacement Part Number | BYT52M-TR-FT |
BYW84-TAP
Vishay Semiconductor Diodes Division
BYW84-TR
Vishay Semiconductor Diodes Division
BYW85-TAP
Vishay Semiconductor Diodes Division
BYW85TR
Vishay Semiconductor Diodes Division
SF5400-TAP
Vishay Semiconductor Diodes Division
SF5400-TR
Vishay Semiconductor Diodes Division
SF5401-TAP
Vishay Semiconductor Diodes Division
SF5401-TR
Vishay Semiconductor Diodes Division
SF5402-TAP
Vishay Semiconductor Diodes Division
SF5402-TR
Vishay Semiconductor Diodes Division
A1020B-2VQ80C
Microsemi Corporation
LFE3-17EA-6FTN256C
Lattice Semiconductor Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
A3PN250-Z2VQG100
Microsemi Corporation
EP2C50F484C6N
Intel
EP4SGX290KF40I4N
Intel
XC6VHX250T-2FFG1154I
Xilinx Inc.
10AX090S4F45E3SG
Intel
10AX115H3F34I2LG
Intel
EP3CLS200F780C8
Intel