Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BYM600A170DN2HOSA1
Manufacturer Part Number | BYM600A170DN2HOSA1 |
---|---|
Future Part Number | FT-BYM600A170DN2HOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BYM600A170DN2HOSA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | - |
Current - Collector (Ic) (Max) | - |
Power - Max | 1400W |
Vce(on) (Max) @ Vge, Ic | - |
Current - Collector Cutoff (Max) | - |
Input Capacitance (Cies) @ Vce | - |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYM600A170DN2HOSA1 Weight | Contact Us |
Replacement Part Number | BYM600A170DN2HOSA1-FT |
APTGT75DSK60T3G
Microsemi Corporation
APTGT75SK120D1G
Microsemi Corporation
APTGT75SK120T1G
Microsemi Corporation
APTGT75SK170D1G
Microsemi Corporation
APTGT75SK60T1G
Microsemi Corporation
APTGT75TA60PG
Microsemi Corporation
APTGV100H60BTPG
Microsemi Corporation
APTGV100H60T3G
Microsemi Corporation
APTGV15H120T3G
Microsemi Corporation
APTGV25H120BG
Microsemi Corporation
XCV300E-6FG256C
Xilinx Inc.
XC7S6-1FTGB196I
Xilinx Inc.
AFS250-1FG256
Microsemi Corporation
A3PE1500-2PQG208
Microsemi Corporation
EP3C25U256C6
Intel
5AGXBA7D4F27C5N
Intel
5SGXEA7K2F35I2L
Intel
AX1000-2FGG676
Microsemi Corporation
LCMXO2-2000UHC-4FG484I
Lattice Semiconductor Corporation
EP4CGX30CF19C6N
Intel