Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / BYG10YHE3_A/I
Manufacturer Part Number | BYG10YHE3_A/I |
---|---|
Future Part Number | FT-BYG10YHE3_A/I |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
BYG10YHE3_A/I Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Avalanche |
Voltage - DC Reverse (Vr) (Max) | 1600V |
Current - Average Rectified (Io) | 1.5A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.15V @ 1.5A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 4µs |
Current - Reverse Leakage @ Vr | 1µA @ 1600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | SMA (DO-214AC) |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BYG10YHE3_A/I Weight | Contact Us |
Replacement Part Number | BYG10YHE3_A/I-FT |
SE20AFGHM3/6A
Vishay Semiconductor Diodes Division
SE20AFGHM3/6B
Vishay Semiconductor Diodes Division
SE20AFJ-M3/6B
Vishay Semiconductor Diodes Division
SE20AFJHM3/6A
Vishay Semiconductor Diodes Division
SE20AFJHM3/6B
Vishay Semiconductor Diodes Division
SE30AFB-M3/6B
Vishay Semiconductor Diodes Division
SE30AFBHM3/6A
Vishay Semiconductor Diodes Division
SE30AFBHM3/6B
Vishay Semiconductor Diodes Division
SE30AFD-M3/6B
Vishay Semiconductor Diodes Division
SE30AFDHM3/6A
Vishay Semiconductor Diodes Division
AGLN020V2-UCG81
Microsemi Corporation
A3P1000-2FGG484I
Microsemi Corporation
EP20K300EFC672-2XA
Intel
5SGXMA7N2F45C2
Intel
M1AGL600V5-FG144I
Microsemi Corporation
LFXP3E-5Q208C
Lattice Semiconductor Corporation
LCMXO2-4000HE-5BG332C
Lattice Semiconductor Corporation
EP2AGX260FF35C6
Intel
EP1C12F324C8
Intel
EPF6024AQC208-3
Intel