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Infineon Technologies BSZ086P03NS3EGATMA1

Name: BSZ086P03NS3EGATMA1
Brand: Infineon Technologies
SKU: BSZ086P03NS3EGATMA1
Price: 0.267304 USD
Availability: InStock
Rating: 4.7 (566 reviews)

MFG Part Number: BSZ086P03NS3EGATMA1

Available Quantity: 64680 Pieces

Reference Price: USD 0.267304

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET P-CH 30V 40A TSDSON-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSZ086P03NS3EGATMA1.pdf

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BSZ086P03NS3EGATMA1 Specifications

Manufacturer Part Number	BSZ086P03NS3EGATMA1
Future Part Number	FT-BSZ086P03NS3EGATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSZ086P03NS3EGATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs	57.5nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4785pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSZ086P03NS3EGATMA1 Weight	Contact Us
Replacement Part Number	BSZ086P03NS3EGATMA1-FT

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