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Infineon Technologies BSP300H6327XUSA1

Name: BSP300H6327XUSA1
Brand: Infineon Technologies
SKU: BSP300H6327XUSA1
Price: 0.5152 USD
Availability: InStock
Rating: 4.7 (768 reviews)

MFG Part Number: BSP300H6327XUSA1

Available Quantity: 64330 Pieces

Reference Price: USD 0.5152

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: SIPMOS® MOSFET N-CH 800V 190MA SOT-223

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSP300H6327XUSA1.pdf

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BSP300H6327XUSA1 Specifications

Manufacturer Part Number	BSP300H6327XUSA1
Future Part Number	FT-BSP300H6327XUSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	SIPMOS®
BSP300H6327XUSA1 Status (Lifecycle)	In Stock
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20 Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSP300H6327XUSA1 Weight	Contact Us
Replacement Part Number	BSP300H6327XUSA1-FT

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