Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP299L6327HUSA1

Infineon Technologies BSP299L6327HUSA1

Name: BSP299L6327HUSA1
Brand: Infineon Technologies
SKU: BSP299L6327HUSA1
Availability: InStock
Rating: 4.7 (33 reviews)

MFG Part Number: BSP299L6327HUSA1

Available Quantity: 56410 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: SIPMOS® MOSFET N-CH 500V 400MA SOT-223

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSP299L6327HUSA1.pdf

BSP299L6327HUSA1 Specifications

Manufacturer Part Number	BSP299L6327HUSA1
Future Part Number	FT-BSP299L6327HUSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	SIPMOS®
BSP299L6327HUSA1 Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSP299L6327HUSA1 Weight	Contact Us
Replacement Part Number	BSP299L6327HUSA1-FT

How To Order?

Request for Quotation - Confirm Price - Order - Payment - Shipment - Done

Shipping Methods

1) DHL (1-3 days)
2) FEDEX (1-3 days)
3) UPS (1-3 days)
4) TNT (2-5 days)
5) EMS (7-10 days)
6) Normal Post (10-20 days)
7) Others
Freight Calculation: Please contact us