Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP299L6327HUSA1
Manufacturer Part Number | BSP299L6327HUSA1 |
---|---|
Future Part Number | FT-BSP299L6327HUSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SIPMOS® |
BSP299L6327HUSA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSP299L6327HUSA1 Weight | Contact Us |
Replacement Part Number | BSP299L6327HUSA1-FT |
IPU50R950CEAKMA2
Infineon Technologies
IPU50R950CEBKMA1
Infineon Technologies
IPU60R1K0CEAKMA1
Infineon Technologies
IPU60R1K0CEAKMA2
Infineon Technologies
IPU60R1K0CEBKMA1
Infineon Technologies
IPU60R1K4C6AKMA1
Infineon Technologies
IPU60R1K4C6BKMA1
Infineon Technologies
IPU60R1K5CEAKMA1
Infineon Technologies
IPU60R1K5CEAKMA2
Infineon Technologies
IPU60R1K5CEBKMA1
Infineon Technologies
XC3S1600E-5FGG320C
Xilinx Inc.
XC3S250E-4VQ100I
Xilinx Inc.
M1AGL600V5-FG484I
Microsemi Corporation
LCMXO3LF-6900C-6BG400C
Lattice Semiconductor Corporation
EP4CGX50CF23C7
Intel
5SGXEA3K1F40C2L
Intel
5SGXMA3K2F40C2LN
Intel
5SGXEB6R3F43C2LN
Intel
XC6VLX195T-3FFG784C
Xilinx Inc.
5CGXFC4C7U19C8N
Intel