Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP299 E6327
Manufacturer Part Number | BSP299 E6327 |
---|---|
Future Part Number | FT-BSP299 E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SIPMOS® |
BSP299 E6327 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSP299 E6327 Weight | Contact Us |
Replacement Part Number | BSP299 E6327-FT |
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