Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP149 E6327
Manufacturer Part Number | BSP149 E6327 |
---|---|
Future Part Number | FT-BSP149 E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SIPMOS® |
BSP149 E6327 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSP149 E6327 Weight | Contact Us |
Replacement Part Number | BSP149 E6327-FT |
IPSA70R1K4CEAKMA1
Infineon Technologies
IPU04N03LA
Infineon Technologies
IPU04N03LB G
Infineon Technologies
IPU050N03L G
Infineon Technologies
IPU05N03LA
Infineon Technologies
IPU060N03L G
Infineon Technologies
IPU06N03LB G
Infineon Technologies
IPU075N03L G
Infineon Technologies
IPU07N03LA
Infineon Technologies
IPU090N03L G
Infineon Technologies
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel