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Infineon Technologies BSP125H6327XTSA1

Name: BSP125H6327XTSA1
Brand: Infineon Technologies
SKU: BSP125H6327XTSA1
Price: 0.321832 USD
Availability: InStock
Rating: 4.6 (502 reviews)

MFG Part Number: BSP125H6327XTSA1

Available Quantity: 56720 Pieces

Reference Price: USD 0.321832

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: SIPMOS® MOSFET N-CH 600V 120MA SOT-223

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSP125H6327XTSA1.pdf

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BSP125H6327XTSA1 Specifications

Manufacturer Part Number	BSP125H6327XTSA1
Future Part Number	FT-BSP125H6327XTSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	SIPMOS®
BSP125H6327XTSA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	45 Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSP125H6327XTSA1 Weight	Contact Us
Replacement Part Number	BSP125H6327XTSA1-FT

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