Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP123E6327T
Manufacturer Part Number | BSP123E6327T |
---|---|
Future Part Number | FT-BSP123E6327T |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SIPMOS® |
BSP123E6327T Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 370mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 370mA, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.79W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSP123E6327T Weight | Contact Us |
Replacement Part Number | BSP123E6327T-FT |
IRLH6224TR2PBF
Infineon Technologies
IRLH6224TRPBF
Infineon Technologies
IRLH7134TR2PBF
Infineon Technologies
IRLHM620TRPBF
Infineon Technologies
IPB10N03LB
Infineon Technologies
IPB10N03LB G
Infineon Technologies
IPS70R1K4P7SAKMA1
Infineon Technologies
IPS70R600P7SAKMA1
Infineon Technologies
IPSA70R2K0CEAKMA1
Infineon Technologies
IPSA70R600CEAKMA1
Infineon Technologies
XC6SLX150T-2CSG484I
Xilinx Inc.
M2GL010-FGG484I
Microsemi Corporation
A54SX32A-CQ256M
Microsemi Corporation
A3PN250-2VQ100
Microsemi Corporation
5SGXEA5K2F40I3L
Intel
5SGXMA9N2F45C2LN
Intel
XC7VX690T-1FF1157I
Xilinx Inc.
XC4VLX160-10FF1148C
Xilinx Inc.
XC2V8000-4FFG1152I
Xilinx Inc.
XC2V1500-5FF896I
Xilinx Inc.