Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSM600C12P3G201
Manufacturer Part Number | BSM600C12P3G201 |
---|---|
Future Part Number | FT-BSM600C12P3G201 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM600C12P3G201 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 5.6V @ 182mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2460W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | Module |
Package / Case | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM600C12P3G201 Weight | Contact Us |
Replacement Part Number | BSM600C12P3G201-FT |
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