Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM50GB120DN2HOSA1
Manufacturer Part Number | BSM50GB120DN2HOSA1 |
---|---|
Future Part Number | FT-BSM50GB120DN2HOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM50GB120DN2HOSA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 78A |
Power - Max | 400W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 3.3nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM50GB120DN2HOSA1 Weight | Contact Us |
Replacement Part Number | BSM50GB120DN2HOSA1-FT |
APTGT50DA170T1G
Microsemi Corporation
APTGT50DA170TG
Microsemi Corporation
APTGT50DH120T3G
Microsemi Corporation
APTGT50DH60TG
Microsemi Corporation
APTGT50DSK120T3G
Microsemi Corporation
APTGT50DSK60T3G
Microsemi Corporation
APTGT50DU170TG
Microsemi Corporation
APTGT50H120TG
Microsemi Corporation
APTGT50H60T2G
Microsemi Corporation
APTGT50SK120D1G
Microsemi Corporation
XC6SLX9-N3FT256C
Xilinx Inc.
A3P1000-PQ208M
Microsemi Corporation
A54SX16-2VQG100
Microsemi Corporation
EP3SL340F1517I4LN
Intel
XC7VX690T-2FFG1930I
Xilinx Inc.
LAE3-17EA-6LMG328E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5MG132C
Lattice Semiconductor Corporation
10AX115R2F40E2LG
Intel
5AGXMA3D4F31C4N
Intel
EP4SGX70DF29I3N
Intel