Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM25GD120DN2BOSA1
Manufacturer Part Number | BSM25GD120DN2BOSA1 |
---|---|
Future Part Number | FT-BSM25GD120DN2BOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM25GD120DN2BOSA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Full Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Power - Max | 200W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
Current - Collector Cutoff (Max) | 800µA |
Input Capacitance (Cies) @ Vce | 1.65nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM25GD120DN2BOSA1 Weight | Contact Us |
Replacement Part Number | BSM25GD120DN2BOSA1-FT |
APTGT30DA170D1G
Microsemi Corporation
APTGT30DA170T1G
Microsemi Corporation
APTGT30DDA60T3G
Microsemi Corporation
APTGT30DSK60T3G
Microsemi Corporation
APTGT30H60T3G
Microsemi Corporation
APTGT30SK170D1G
Microsemi Corporation
APTGT30SK170T1G
Microsemi Corporation
APTGT30TL60T3G
Microsemi Corporation
APTGT35A120D1G
Microsemi Corporation
APTGT35DA120D1G
Microsemi Corporation
A3P030-QNG68
Microsemi Corporation
A54SX16P-TQ144
Microsemi Corporation
XC3S500E-4FG320I
Xilinx Inc.
XC2V80-4FGG256C
Xilinx Inc.
XC3090-100PQ208C
Xilinx Inc.
A3P1000-2FG484
Microsemi Corporation
M1A3P600-1FG256
Microsemi Corporation
M7A3P1000-PQG208
Microsemi Corporation
5SEE9F45I3N
Intel
LAE3-35EA-6LFN672E
Lattice Semiconductor Corporation