Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM200GB120DN2HOSA1
Manufacturer Part Number | BSM200GB120DN2HOSA1 |
---|---|
Future Part Number | FT-BSM200GB120DN2HOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM200GB120DN2HOSA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 290A |
Power - Max | 1400W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 200A |
Current - Collector Cutoff (Max) | 4mA |
Input Capacitance (Cies) @ Vce | 13nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM200GB120DN2HOSA1 Weight | Contact Us |
Replacement Part Number | BSM200GB120DN2HOSA1-FT |
APTGT300SK120D3G
Microsemi Corporation
APTGT300SK170D3G
Microsemi Corporation
APTGT30A170D1G
Microsemi Corporation
APTGT30A60T1G
Microsemi Corporation
APTGT30DA170D1G
Microsemi Corporation
APTGT30DA170T1G
Microsemi Corporation
APTGT30DDA60T3G
Microsemi Corporation
APTGT30DSK60T3G
Microsemi Corporation
APTGT30H60T3G
Microsemi Corporation
APTGT30SK170D1G
Microsemi Corporation
XC4044XL-1HQ304I
Xilinx Inc.
XCKU060-2FFVA1517E
Xilinx Inc.
APA1000-FGG896A
Microsemi Corporation
M1A3P600-1FGG256I
Microsemi Corporation
A42MX36-3PQ208I
Microsemi Corporation
M2GL010S-1VFG400I
Microsemi Corporation
5SGSED6K2F40C2N
Intel
APA600-FGG676
Microsemi Corporation
M1A3P600-FGG144
Microsemi Corporation
LCMXO2280C-4FT324C
Lattice Semiconductor Corporation