Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSM180D12P2C101
Manufacturer Part Number | BSM180D12P2C101 |
---|---|
Future Part Number | FT-BSM180D12P2C101 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM180D12P2C101 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
Power - Max | 1130W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | - |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM180D12P2C101 Weight | Contact Us |
Replacement Part Number | BSM180D12P2C101-FT |
SQJ990EP-T1_GE3
Vishay Siliconix
SIZ200DT-T1-GE3
Vishay Siliconix
SQJQ900E-T1_GE3
Vishay Siliconix
SIZ342DT-T1-GE3
Vishay Siliconix
SIZ320DT-T1-GE3
Vishay Siliconix
SIZ346DT-T1-GE3
Vishay Siliconix
SIZ322DT-T1-GE3
Vishay Siliconix
SIZ328DT-T1-GE3
Vishay Siliconix
SIZ340DT-T1-GE3
Vishay Siliconix
SIZ348DT-T1-GE3
Vishay Siliconix
A1020B-2VQ80C
Microsemi Corporation
LCMXO2280C-3T144C
Lattice Semiconductor Corporation
XC6SLX150T-2FG900C
Xilinx Inc.
LFE2-70E-7F900C
Lattice Semiconductor Corporation
A3P060-1VQ100T
Microsemi Corporation
10M16DCF256C7G
Intel
5SGXMA7K1F40C2N
Intel
5SGSED6K2F40I2LN
Intel
EP4CE10E22A7N
Intel
LFE2-35SE-7F484C
Lattice Semiconductor Corporation