Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM150GB120DN2HOSA1
Manufacturer Part Number | BSM150GB120DN2HOSA1 |
---|---|
Future Part Number | FT-BSM150GB120DN2HOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM150GB120DN2HOSA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 210A |
Power - Max | 1250W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 150A |
Current - Collector Cutoff (Max) | 2.8mA |
Input Capacitance (Cies) @ Vce | 11nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM150GB120DN2HOSA1 Weight | Contact Us |
Replacement Part Number | BSM150GB120DN2HOSA1-FT |
APTGT200DA60TG
Microsemi Corporation
APTGT200SK120D3G
Microsemi Corporation
APTGT200SK170D3G
Microsemi Corporation
APTGT200SK60TG
Microsemi Corporation
APTGT20A60T1G
Microsemi Corporation
APTGT20DDA60T3G
Microsemi Corporation
APTGT20DSK60T3G
Microsemi Corporation
APTGT20H60T3G
Microsemi Corporation
APTGT20X60T3G
Microsemi Corporation
APTGT25A120D1G
Microsemi Corporation
XCV300E-6FG256C
Xilinx Inc.
XC7S6-1FTGB196I
Xilinx Inc.
AFS250-1FG256
Microsemi Corporation
A3PE1500-2PQG208
Microsemi Corporation
EP3C25U256C6
Intel
5AGXBA7D4F27C5N
Intel
5SGXEA7K2F35I2L
Intel
AX1000-2FGG676
Microsemi Corporation
LCMXO2-2000UHC-4FG484I
Lattice Semiconductor Corporation
EP4CGX30CF19C6N
Intel