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Infineon Technologies BSG0810NDIATMA1

MFG Part Number
BSG0810NDIATMA1
Available Quantity
84680 Pieces
Reference Price
USD 0.896896
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET 2N-CH 25V 19A/39A 8TISON
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Arrays
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
BSG0810NDIATMA1.pdf
BSG0810NDIATMA1 Image

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BSG0810NDIATMA1 Specifications

Manufacturer Part Number BSG0810NDIATMA1
Future Part Number FT-BSG0810NDIATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
BSG0810NDIATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 39A
Rds On (Max) @ Id, Vgs 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
BSG0810NDIATMA1 Weight Contact Us
Replacement Part Number BSG0810NDIATMA1-FT

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