Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC440N10NS3GATMA1
Manufacturer Part Number | BSC440N10NS3GATMA1 |
---|---|
Future Part Number | FT-BSC440N10NS3GATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC440N10NS3GATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 12µA |
Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 29W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC440N10NS3GATMA1 Weight | Contact Us |
Replacement Part Number | BSC440N10NS3GATMA1-FT |
BSC027N03S G
Infineon Technologies
BSC027N06LS5ATMA1
Infineon Technologies
BSC028N06LS3GATMA1
Infineon Technologies
BSC028N06NSATMA1
Infineon Technologies
BSC028N06NSTATMA1
Infineon Technologies
BSC029N025S G
Infineon Technologies
BSC030N03MSGATMA1
Infineon Technologies
BSC030N08NS5ATMA1
Infineon Technologies
BSC032N03S
Infineon Technologies
BSC032N03SG
Infineon Technologies
A54SX32A-TQG176M
Microsemi Corporation
M1AFS250-FG256
Microsemi Corporation
APA600-FG676I
Microsemi Corporation
5SGSMD6K1F40C2LN
Intel
EP4SE360H29I3
Intel
5SGXEA7N3F45C2LN
Intel
LFXP2-30E-6FT256I
Lattice Semiconductor Corporation
EP2AGX45DF29I3
Intel
EPF10K10LC84-4N
Intel
EP4SGX360HF35I4
Intel