Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC320N20NS3GATMA1
Manufacturer Part Number | BSC320N20NS3GATMA1 |
---|---|
Future Part Number | FT-BSC320N20NS3GATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC320N20NS3GATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2350pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC320N20NS3GATMA1 Weight | Contact Us |
Replacement Part Number | BSC320N20NS3GATMA1-FT |
BSC026N02KSGAUMA1
Infineon Technologies
BSC026N04LSATMA1
Infineon Technologies
BSC026N08NS5ATMA1
Infineon Technologies
BSC027N03S G
Infineon Technologies
BSC027N06LS5ATMA1
Infineon Technologies
BSC028N06LS3GATMA1
Infineon Technologies
BSC028N06NSATMA1
Infineon Technologies
BSC028N06NSTATMA1
Infineon Technologies
BSC029N025S G
Infineon Technologies
BSC030N03MSGATMA1
Infineon Technologies
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel