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Infineon Technologies BSC082N10LSGATMA1

Name: BSC082N10LSGATMA1
Brand: Infineon Technologies
SKU: BSC082N10LSGATMA1
Price: 0.9438 USD
Availability: InStock
Rating: 4.6 (790 reviews)

MFG Part Number: BSC082N10LSGATMA1

Available Quantity: 29210 Pieces

Reference Price: USD 0.9438

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 100A TDSON-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSC082N10LSGATMA1.pdf

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BSC082N10LSGATMA1 Specifications

Manufacturer Part Number	BSC082N10LSGATMA1
Future Part Number	FT-BSC082N10LSGATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSC082N10LSGATMA1 Status (Lifecycle)	In Stock
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	13.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	104nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7400pF @ 50V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSC082N10LSGATMA1 Weight	Contact Us
Replacement Part Number	BSC082N10LSGATMA1-FT

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