Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC079N10NSGATMA1
Manufacturer Part Number | BSC079N10NSGATMA1 |
---|---|
Future Part Number | FT-BSC079N10NSGATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC079N10NSGATMA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.9 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5900pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC079N10NSGATMA1 Weight | Contact Us |
Replacement Part Number | BSC079N10NSGATMA1-FT |
BSZ088N03MSGATMA1
Infineon Technologies
BSZ0909NSATMA1
Infineon Technologies
BSZ100N03MSGATMA1
Infineon Technologies
BSZ165N04NSGATMA1
Infineon Technologies
IPC100N04S51R2ATMA1
Infineon Technologies
IPC100N04S51R7ATMA1
Infineon Technologies
IPC100N04S51R9ATMA1
Infineon Technologies
IPC100N04S5L1R9ATMA1
Infineon Technologies
IPZ40N04S55R4ATMA1
Infineon Technologies
IRFH7084TRPBF
Infineon Technologies
XC7A100T-2FTG256I
Xilinx Inc.
APA450-FGG484A
Microsemi Corporation
10AX032E4F27I3SG
Intel
XC6VHX380T-2FFG1154C
Xilinx Inc.
XC7K325T-L2FBG900I
Xilinx Inc.
LFXP3C-5Q208C
Lattice Semiconductor Corporation
LFXP2-5E-6MN132I
Lattice Semiconductor Corporation
10AX066N4F40I3LG
Intel
EP1AGX35DF780C6
Intel
EP1S40F1020C5N
Intel