Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC0501NSIATMA1
Manufacturer Part Number | BSC0501NSIATMA1 |
---|---|
Future Part Number | FT-BSC0501NSIATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC0501NSIATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 15V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC0501NSIATMA1 Weight | Contact Us |
Replacement Part Number | BSC0501NSIATMA1-FT |
BSZ105N04NSGATMA1
Infineon Technologies
BSZ130N03LSGATMA1
Infineon Technologies
BSZ22DN20NS3GATMA1
Infineon Technologies
BSC017N04NSGATMA1
Infineon Technologies
BSC020N03MSGATMA1
Infineon Technologies
BSC024NE2LSATMA1
Infineon Technologies
BSC025N03MSGATMA1
Infineon Technologies
BSC026NE2LS5ATMA1
Infineon Technologies
BSC030N03LSGATMA1
Infineon Technologies
BSC034N03LSGATMA1
Infineon Technologies
LCMXO1200E-5T144C
Lattice Semiconductor Corporation
A1020B-2PQ100C
Microsemi Corporation
XC6SLX9-2FT256I
Xilinx Inc.
A3PN125-1VQ100
Microsemi Corporation
EP2A15F672C7AA
Intel
EP3CLS70U484I7
Intel
5SGSED6K2F40C3N
Intel
EP4CE10E22C9L
Intel
LFE3-70E-8FN484I
Lattice Semiconductor Corporation
EP20K600EBC652-1X
Intel