Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC0501NSIATMA1
Manufacturer Part Number | BSC0501NSIATMA1 |
---|---|
Future Part Number | FT-BSC0501NSIATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC0501NSIATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 15V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC0501NSIATMA1 Weight | Contact Us |
Replacement Part Number | BSC0501NSIATMA1-FT |
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