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Infineon Technologies BSC019N06NSATMA1

Name: BSC019N06NSATMA1
Brand: Infineon Technologies
SKU: BSC019N06NSATMA1
Price: 0.916408 USD
Availability: InStock
Rating: 4.9 (503 reviews)

MFG Part Number: BSC019N06NSATMA1

Available Quantity: 57020 Pieces

Reference Price: USD 0.916408

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ DIFFERENTIATED MOSFETS

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSC019N06NSATMA1.pdf

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BSC019N06NSATMA1 Specifications

Manufacturer Part Number	BSC019N06NSATMA1
Future Part Number	FT-BSC019N06NSATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSC019N06NSATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.95 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.3V @ 74µA
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5.25nF @ 30V
FET Feature	-
Power Dissipation (Max)	136W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8 FL
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSC019N06NSATMA1 Weight	Contact Us
Replacement Part Number	BSC019N06NSATMA1-FT

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